InP nanostructures formed in GaP-based nanowires grown on Si(111) substrates

被引：11
|
作者：
Tateno, K. [1 ]
Zhang, G. [1 ]
Nakano, H. [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 12期
基金：
日本学术振兴会;
关键词：
crystal structure; vapor phase epitaxy; nanowire; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2008.03.001
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Two types of InP growth in GaP-based nanowires have been reported. The nanowires were grown by the vapor-liquid-solid method using An particles of around 20-nm diameter as catalysts. For GaP/InP/GaP nanowire growth, InP egg-like structures were formed when the InP growth temperature was higher than the GaP growth one. Successively, the second GaP nanowire could be grown on these InP structures. Transmission electron microscopy and energy dispersive X-ray spectroscopy analyses indicated that these InP nanostructures were grown in both the axial and radial directions and that the edge of the first GaP nanowires was partly covered with InP, which formed a core-shell structure. For InP capping growth, which was performed after the growth of two-times-alternated GaP/GaAs on GaP nanowires, selective InP growth on the two GaAs parts was confirmed. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2966 / 2969
页数：4
相关论文
共 50 条
  • [21] Selective growth of Cu nanowires on Si(111) substrates
    Tokuda, N
    Hojo, D
    Yamasaki, S
    Miki, K
    Yamabe, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (10A): : L1210 - L1212
  • [22] Selective Growth of Cu Nanowires on Si(111) Substrates
    Tokuda, N., 1600, Japan Society of Applied Physics (42):
  • [23] Averaging effect on improving signal reproducibility of gap-based and gap-free SERS substrates based on ordered Si nanowire arrays
    Huang, Jian-An
    Zhao, Yingqi
    Zhu, Xiaoyue
    Zhang, Wenjun
    RSC ADVANCES, 2017, 7 (09): : 5297 - 5305
  • [24] Comparative Study of the Microstructure of Bi2Se3 Thin Films Grown on Si(111) and InP(111) Substrates
    Tarakina, N. V.
    Schreyeck, S.
    Borzenko, T.
    Schumacher, C.
    Karczewski, G.
    Brunner, K.
    Gould, C.
    Buhmann, H.
    Molenkamp, L. W.
    CRYSTAL GROWTH & DESIGN, 2012, 12 (04) : 1913 - 1918
  • [25] Characteristics of Strain-Induced InxGai1-xAs Nanowires Grown on Si(111) Substrates
    Shin, Jae Cheol
    Choi, Kyoung Jin
    Kim, Do Yang
    Choi, Won Jun
    Li, Xiuling
    CRYSTAL GROWTH & DESIGN, 2012, 12 (06) : 2994 - 2998
  • [26] Synthesis and characterization of ZnO nanostructures grown on Si substrates
    Zhao, Q. X.
    Klason, P.
    Willander, M.
    Bergman, P. J.
    Jiang, W. L.
    Yang, J. H.
    PHYSICA SCRIPTA, 2006, T126 : 131 - 134
  • [27] AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates
    Kuno, T
    Akane, T
    Jinno, S
    Hirata, T
    Yang, Y
    Isogai, Y
    Watanabe, N
    Fujiwara, Y
    Nakamura, A
    Takeda, Y
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 461 - 464
  • [28] Surface characterization of AlGaN grown on Si (111) substrates
    Pan, Xu
    Wang, Xiaoliang
    Xiao, Hongling
    Wang, Cuimei
    Feng, Chun
    Jiang, Lijuan
    Yin, Haibo
    Chen, Hong
    JOURNAL OF CRYSTAL GROWTH, 2011, 331 (01) : 29 - 32
  • [29] Characterization of GaN grown on patterned Si(111) substrates
    Wang, D
    Dikme, Y
    Jia, S
    Chen, KJ
    Lau, KM
    van Gemmern, P
    Lin, YC
    Kalisch, H
    Jansen, RH
    Heuken, M
    JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 489 - 495
  • [30] Structural and Optical Properties of InN Nanowires Formed on Si(111)
    Shin, Jaehyeok
    Noh, Siyun
    Lee, Jinseong
    Oh, Jaewon
    Ryu, Mee-Yi
    Kim, Jin Soo
    APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2022, 31 (06): : 141 - 144
12345