Self-Heating in Advanced CMOS Technologies

被引:0
|
作者
Prasad, C. [1 ]
Ramey, S. [1 ]
Jiang, L. [2 ]
机构
[1] Intel Corp, Log Technol Dev Qual & Reliabil, 2501 NW 229th Ave, Hillsboro, OR 97124 USA
[2] Intel Corp, Log Technol Dev, Proc Technol Modeling, 2501 NW 229th Ave, Hillsboro, OR 97124 USA
关键词
advanced technology; reliability; self-heat; self-heating; transistor; THERMAL-CONDUCTIVITY; TEMPERATURE; SCATTERING; MOSFETS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
On advanced technology nodes, increases in power density, non-planar architectures and different material systems can exacerbate local self-heating due to active power dissipation, which can affect device performance and reliability in various ways. This paper presents an overview of the research on self-heating in transistors and discusses modulators, measurement schemes, spatio-temporal sensitivities, and impacts on performance and reliability. As the industry continues to scale dimensions and power densities, the significance of self-heating effects will continue to grow, and a robust frame-work to fully assess it, and deal with its impacts to circuits and IP blocks are essential.
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页数:7
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