Fully-integrated concurrent dual-band CMOS power amplifier with switchless matching network

被引：4
|
作者：
Yoon, Y. [1 ]
Kim, H. [1 ]
Cha, J. [2 ]
Lee, O. [4 ]
Kim, H. S. [3 ]
Kim, W. [2 ]
Lee, C. -H. [2 ]
Laskar, J. [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Samsung Design Ctr, Atlanta, GA USA
[3] Univ N Texas, Dept Elect Engn, Denton, TX 76203 USA
[4] Qualcomm Inc, San Diego, CA USA
来源：
ELECTRONICS LETTERS | 2011年 / 47卷 / 11期
关键词：
D O I：
10.1049/el.2011.0663
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Presented is a fully-integrated 2.45/3.8 GHz concurrent dual-band CMOS power amplifier (PA) with a switchless matching network. The area of the PA is 1.46 x 0.7 mm(2), and it is fabricated in a 0.18 mu m RF CMOS process. It uses a supply voltage of 3.3 V. The measured maximum output power and drain efficiency of the dual-band PA are 23.4 dBm and 42% at 2.45 GHz and 24.5 dBm and 39% at 3.8 GHz, respectively.
引用
收藏
页码：659 / 660
页数：2
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