The slot-coupled hemispherical dielectric resonator antenna with a parasitic patch: Applications to the circularly polarized antenna and wide-band antenna

被引:44
|
作者
Leung, KW [1 ]
Ng, HK
机构
[1] City Univ Hong Kong, Wireless Commun Res Ctr, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
关键词
D O I
10.1109/TAP.2005.846731
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The aperture-coupled hemispherical dielectric resonator antenna (DRA) with a parasitic patch is studied rigorously. Using the Green's function approach, integral equations for the unknown patch and slot currents are formulated and solved using the method of moments. The theory is utilized to design a circularly polarized (CP) DRA and a wide-band linearly polarized (LP) DRA. In the former, the CP frequency and axial ratio (AR) can easily be controlled by the patch location and patch size, respectively, with the impedance matched by varying the slot length and microstrip stub length. It is important that the AR will not be affected when the input impedance is tuned, and the CP design is therefore greatly facilitated. For the wide-band LP antenna, a maximum bandwidth of 22% can be obtained, which is much wider than the previous bandwidth of 7.5% wit parasitic patches. Finally, the frequency-tuning characteristics of the proposed antenna are discussed. Since the parasitic at can be applied to any DRAs, the method will find in applications practical DRA designs.
引用
收藏
页码:1762 / 1769
页数:8
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