Three-step phase-shifting imaging ellipsometry to measure nanofilm thickness profiles

被引:22
|
作者
Shoji, Eita [1 ]
Komiya, Atsuki [2 ]
Okajima, Junnosuke [2 ]
Kubo, Masaki [1 ]
Tsukada, Takao [1 ]
机构
[1] Tohoku Univ, Dept Chem Engn, Aoba Ku, 6-6-07 Aramaki, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, Inst Fluid Sci, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
关键词
Ellipsometry; Phase-shifting technique; Thickness measurement; Nanofilm; RESIDUAL-STRESS; INTERFEROMETRY; SHEARING;
D O I
10.1016/j.optlaseng.2018.09.005
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Three-step phase-shifting imaging ellipsometry is proposed for the dynamic measurement of a nanofilm's thickness profile in two dimensions. The designed apparatus consists of an ellipsometric optical configuration and an image-processing unit to perform phase-shifting imaging ellipsometry measurements, a key technique used to achieve dynamic and two-dimensional measurements. The uncertainties of the ellipsometric parameters yr and A were evaluated based on the developed optical system and the proposed three-step phase-shifting technique. The thickness profile of a SiO2 nanofilm on a silicon substrate was measured to calibrate the proposed apparatus; results were comparable to those obtained by a commercial spectroscopic ellipsometer. The measured thickness profiles are almost flat over the area of 1.10 nun x 2.21 mm with the spatial resolutions of 1.58 and 4.62 mu m in the horizontal and vertical directions, respectively. The differences of average thickness between the proposed apparatus and a commercial spectroscopic ellipsometer were less than 3 nm. Furthermore, measurement precision was validated by obtaining a standard deviation of less than 2.5 nm.
引用
收藏
页码:145 / 150
页数:6
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