Optical and photocurrent spectroscopy studies of inter- and intra-band transitions in size-tailored InAs/GaAs quantum dots

被引：0

作者：

Mukhametzhanov, I

Chen, ZH

Baklenov, O

Kim, ET

Madhukar, A

机构：

[1] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Phys, Los Angeles, CA 90089 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 224卷 / 03期

关键词：

D O I：

10.1002/(SICI)1521-3951(200104)224:3<697::AID-PSSB697>3.3.CO;2-D

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Combined inter- and intra-band spectroscopy studies are presented on structurally well-characterized InAs/GaAs(001) self-assembled quantum dots grown via conventional continuous deposition and the innovative punctuated island growth approach. Temperature and power dependent photoluminescence (PL) and PL Excitation (PLE) on these remarkably uniform quantum dot based samples (with typical PL linewidth approximate to 25 meV). reveal details of size-dependent electronic structure. These studies are complemented with systematic near- and middle-infrared photocurrent spectroscopy for interband through electron intra-band transitions as a function of temperature and applied electric field.

引用

页码：697 / 702

页数：6

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