Widely Tunable Narrow-Linewidth Monolithically Integrated External-Cavity Semiconductor Lasers

被引：116

作者：

Komljenovic, Tin ^{[1
]}

Srinivasan, Sudharsanan ^{[1
]}

Norberg, Erik ^{[2
]}

Davenport, Michael ^{[1
]}

Fish, Gregory ^{[2
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

[2] Aurrion Inc, Goleta, CA 93117 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2015年 / 21卷 / 06期

关键词：

Semiconductor lasers; cavity resonators; laser tuning; photonic integrated circuits; SPECTRAL LINEWIDTH; OPTICAL FEEDBACK; CHAOS;

D O I：

10.1109/JSTQE.2015.2422752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We theoretically analyze, design, and measure the performance of a semiconductor laser with a monolithically integrated external cavity. A similar to 4 cm long on-chip cavity is made possible by a low-loss silicon waveguide platform. We show tuning in excess of 54 nm in the O-band as well as significant reduction in laser linewidth due to controlled feedback from the external cavity. The measured linewidth in full tuning range is below 100 kHz and the best results are around 50 kHz. Approaches to further improve the performance of such laser architectures are described.

引用

页码：214 / 222

页数：9

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