Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

被引:13
|
作者
Biolek, Z. [1 ]
Biolek, D. [2 ]
Biolkova, V. [3 ]
机构
[1] Brno Univ Technol, Dept Microelect, Tech 10, Brno, Czech Republic
[2] Univ Def, Brno Univ Technol, Dept Microelect Elect Engn, Tech 10, Kounicova 65, Brno, Czech Republic
[3] Brno Univ Technol, Dept Radio Elect, Tech 10, Brno, Czech Republic
关键词
memristors; hysteresis; PSM; ideal memristors; memcapacitors; meminductors; differentiable constitutive relation; pinched hysteresis loop; sinusoidal signal; integer power; fingerprint; parameter versus state map;
D O I
10.1049/el.2016.2138
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.
引用
收藏
页码:1669 / U23
页数:2
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