A new approach for CMOS op-amp synthesis

被引:5
|
作者
Mandal, P [1 ]
Visvanathan, V [1 ]
机构
[1] Indian Inst Sci, Elect Comm Engg Dept, Bangalore 560012, Karnataka, India
关键词
D O I
10.1109/ICVD.1999.745147
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A new approach for CMOS op-amp circuit syntheses has proposed here. The approach is based on the observation that the first order behavior of a MOS transistor in the saturation region is such that the cost and the constraint functions for this optimization problem can be modeled as convex functions. Second order effects are then handled by formulating the problem as one of solving a sequence of convex programs. Numerical experiments show that the solutions to the sequence of convex: programs converges to the same design point for widely varying initial guesses. This strongly suggests that the approach is capable of determining the globally optimal solution to the problem. Performance of the synthesized op-amps has been verified against detailed SPICE simulation for a 1.6 mu CMOS process.
引用
收藏
页码:189 / 194
页数:6
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