Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(001)

被引：6
|
作者：
Kamiya, Itaru [1 ]
Shirasaka, Takeo [1 ]
Shimomura, Kenichi [1 ]
Tex, David M. [1 ]
机构：
[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期
关键词：
Low dimensional structures; Nucleation; Growth models; Molecular beam epitaxy; Semiconducting III-V materials; STRANSKI-KRASTANOW GROWTH; MOLECULAR-BEAM EPITAXY; GAAS; ISLANDS;
D O I：
10.1016/j.jcrysgro.2011.01.034
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of self-assembled (SA) quantum dots (QDs) on GaAs(0 0 1) by molecular beam epitaxy (MBE) is studied as a function of the In and As fluxes. Under growth rates below 0.05 ML/s, we find that the density of QDs increases not only with increasing In flux but also with As flux. The formation mechanisms are discussed based on the results obtained by atomic force microscopy (AFM), and that As flux alters the surface diffusion, leading to the control of QD nucleus density. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：219 / 222
页数：4
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