Fabrication of Perpendicular MgO-Based Magnetic Tunnel Junctions With TbFe/FeCo Electrodes

被引：2
|
作者：
Ye, Lin-Xiu [1 ]
Lee, Ching-Ming [1 ,2 ]
Lee, Jia-Mou [1 ]
Lin, Jia-Hua [1 ,3 ]
Liu, Jin-Zhen [1 ,2 ]
Wu, Jong-Ching [4 ]
Wu, Te-Ho [1 ,2 ,5 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Taiwan SPIN Res Ctr, Touliu 64002, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Grad Sch Mat Sci, Touliu 64002, Taiwan
[3] Natl Yunlin Univ Sci & Technol, Grad Sch Optoelect, Touliu 64002, Taiwan
[4] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan
[5] Overseas Chinese Univ, Grad Sch Informat Technol, Taichung 407, Taiwan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2011年 / 47卷 / 10期
关键词：
Magnetic tunnel junctions (MT[!text type='Js']Js[!/text]); perpendicular magnetic anisotropy; rare-earth-transition metal; tunnel magnetoresistance (TMR); ANISOTROPY; FILMS;
D O I：
10.1109/TMAG.2011.2157117
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports the results obtained using TbFe and FeCo alloys as the electrodes of MgO-based perpendicular magnetic tunnel junctions (pMTJs). Without annealing treatment, the as-deposited structure showed MgO (001) crystalline texture. The tunnel magnetoresistance (TMR) ratio measured from the patterned cell of size 3 x 6 mu m(2) was 9.5% at room temperature. However, the coercivities of both free and fixed layers were reduced considerably due to the damage caused from the patterning process. The hysteresis loop measurements showed that the magnetic properties of the structures can still be maintained after annealing up to 350 degrees C.
引用
收藏
页码：3857 / 3859
页数：3
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