Application of artificial neural networks in noise wave modeling of DG MESFETs

被引：0
|
作者：
Marinkovic, Zlatica [1 ]
Rancic, Olivera Pronic [1 ]
Markovic, Vera [1 ]
机构：
[1] Fac Elect Engn, Aleksandra Medvedeva 14, Nish 18000, Serbia
来源：
TELSIKS 2007: 8TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, VOLS 1 AND 2 | 2007年
关键词：
DG MESFET; noise wave model; artificial neural network;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved procedure for noise modeling of dualgate MESFET (DG MESFET) based on transistor noise wave model is proposed in this paper. A DG MESFET small-signal model is composed of two cascoded single-gate MESFET intrinsic equivalent circuits embedded in a network representing the device parasitics. The wave interpretation of the device noise is used for defining the noise parameters of each single gate MESFET. An artificial neural network is included in the noise model in order to model the noise parameters more accurately.
引用
收藏
页码：283 / +
页数：2
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