Photoluminescence characterization of strained Si-SiGe-on-insulator wafers with different Ge fractions

被引：19
|
作者：
Wang, D
Nakashima, H
Matsumoto, K
Nakamae, M
机构：
[1] Kyushu Univ, Art Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan
[2] SUMCO Corp, Kohoku, Saga 9480579, Japan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期
关键词：
D O I：
10.1063/1.2152109
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) was observed for three strained Si-SiGe-on-insulator wafers with different Ge fractions. The PL signals of wafers with 13% and 18% Ge fractions are deep-level free, implying high wafer qualities. A defect-related broad PL signal could be observed for a wafer with 25% Ge fraction. The dependences of the PL signals as well as the wafer's qualities on Ge fractions were discussed in detail. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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