In situ growing Bi2MoO6 on g-C3N4 nanosheets with enhanced photocatalytic hydrogen evolution and disinfection of bacteria under visible light irradiation

被引:310
|
作者
Li, Juan [1 ,2 ]
Yin, Yunchao [1 ]
Liu, Enzhou [1 ]
Ma, Yongning [1 ]
Wan, Jun [1 ]
Fan, Jun [1 ]
Hu, Xiaoyun [3 ]
机构
[1] Northwest Univ, Sch Chem Engn, Xian 710069, Peoples R China
[2] Luoyang Inst Sci & Technol, Sch Environm Engn & Chem, Luoyang 471023, Peoples R China
[3] Northwest Univ, Sch Phys, Xian 710069, Peoples R China
基金
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词
g-C-3; N-4; nanosheets; Bi2MoO6; Photocatalysis; Hydrogen evolution; Disinfection of bacteria; GRAPHITIC CARBON NITRIDE; HETEROJUNCTION PHOTOCATALYSTS; EFFICIENT; FABRICATION; NANOCOMPOSITES; PERFORMANCE; COMPOSITES; WATER;
D O I
10.1016/j.jhazmat.2016.09.008
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Bi2MoO6/g-C3N4 heterojunctions were fabricated by an in situ solvothermal method using g-C3N4 nanosheets. The photocatalytic activities of as-prepared samples were evaluated by hydrogen evolution from water splitting and disinfection of bacteria under visible light irradiation. The results indicate that exfoliating bulk g-C3N4 to g-C3N4 nanosheets greatly enlarges the specific surface area and shortens the diffusion distance for photogenerated charges, which could not only promote the photocatalytic performance but also benefit the sufficient interaction with Bi2MoO6. Furthermore, intimate contact of Bi2MoO6 (BM) and g-C3N4 nanosheets (CNNs) in the BM/CNNs composites facilitates the transfer and separation of photogenetrated electron-hole pairs. 20%-BM/CNNs heterojunction exhibits the optimal photocatalytic hydrogen evolution as well as photocatalytic disinfection of bacteria. Furthermore, h(+) was demonstrated as the dominant reactive species which could make the bacteria cells inactivated in the photocatalytic disinfection process. This study extends new chance of g-C3N4-based photocatalysts to the growing demand of clean new energy and drinking water. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:183 / 192
页数:10
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