Nanomechanical Characterization and Metrology for Low-k and ULK Materials

被引：2
|
作者：
Hangen, Ude D. [1 ]
Yeap, Kong-Boon [2 ]
Vodnick, David [1 ]
Zschech, Ehrenfried
Li, Han [2 ,3 ,4 ]
Vlassak, Joost [3 ]
机构：
[1] Hysitron Inc, 10025 Valley View Rd, Minneapolis, MN 55344 USA
[2] Fraunhofer Inst Nondestruct Testing, D-01099 Dresden, Germany
[3] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[4] Intel Corp, Hillsboro, OR 97124 USA
来源：
FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2011 | 2011年 / 1395卷
关键词：
Low-k; ULK; porosity; hardness; modulus; scratch; adhesion; INDENTATION; FILMS; ADHESION;
D O I：
10.1063/1.3657898
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dielectric constant of dielectric films used in on-chip interconnect stacks of microelectronic products is controlled by the deposited material for low-k and by the incorporation of porosity/voids for ultra-low-k (ULK) materials. The porosity has a significant and direct influence on the mechanical and interfacial properties of these materials. Pore volume fraction and spatial distribution have a detrimental impact on the material stiffness and fracture toughness, film adhesion, sensitivity to CMP and device mechanical reliability during other processing steps. The nanomechanical testing of low-k films - namely nanoindentation and nanoscratch measurements - allows an indirect characterization of the porosity of a ULK film. These tests can resolve variations with nanometer scale spatial resolution as well as changes of porosity of the material as a function of film thickness, all of which significantly impact the mechanical reliability of the device.
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页数：9
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