Seeded growth of Strontium - Doped Lead Zirconate Titanate

被引：0
|
作者：
Dutta, I [1 ]
Singh, RN [1 ]
机构：
[1] Univ Cincinnati, Dept Chem & Mat Engn, Cincinnati, OH 45221 USA
来源：
CERAMIC MATERIALS AND MULTILAYER ELECTRONIC DEVICES | 2003年 / 150卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The growth of large grains of Strontium-modified Lead Zirconate Titanate (PZT) is investigated using a seeding approach. SrTiO3 (111) single crystals are embedded into the polycrystalline Lead Strontium Zirconate Titanate (PSZT) using a tape lamination approach. The samples are then sintered and annealed at temperatures above 1300degreesC to promote crystal growth. The development of large grains (similar to15mum) adjacent to the single crystal is observed. However, development of very large grains > 40mum is hampered by the formation of a monoclinic ZrO2 phase.
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页码：139 / 148
页数：10
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