Process technology for next generation photomask

Optical lithography will be extended to 0.13 mu m device generation even though other lithography methods have been developed and on-mask chrome structures must undergo a corresponding in size reduction. Therefore, the current photomask manufacturing technologies should be further developed in order to meet the requirements for rapidly shrinking devices geometries with increasing device densities. This requires the mass production of optical proximity correction masks with quarter micron assist features and phase shift masks. Excellent linewidth control will also be required in the core of 6 inch area. In this paper, a photomask process technology for making next generation photomask satisfying high resolution and good CD central requirements has been described.