Performance and reliability of 12.5-Gb/s oxide-free 850-nm mesa VCSELs

被引：2
|
作者：
Murty, M. V. Ramana [1 ]
Chirovsky, Leo M. F. [1 ]
Hu, Syn-Yem [1 ]
Venables, David [1 ]
Cheng, Michael [1 ]
Ciesla, Craig M. [1 ]
机构：
[1] JDS Uniphase, San Jose, CA 95134 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2008年 / 44卷 / 3-4期
关键词：
laser reliability; mesa structure; multimode fiber transmission; vertical-cavity surface-emitting laser;
D O I：
10.1109/JQE.2007.911677
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Oxide-free mesa vertical-cavity surface-emitting lasers (VCSELs) emitting at 850 nm have been designed for short reach datacom applications at data rates. up to 12.5 Gb/s. The top distributed Bragg reflector is etched away creating a mesa that provides both current and photon confinement. The devices exhibit low threshold current and a donut-shaped far-field profile that is suited for transmission on both legacy and laser-optimized multimode fibers. Open eye diagrams with high margin are observed in on-wafer testing of 8-10 mu m VCSELs at 10.3125 Gb/s over 5 degrees C-95 degrees C. Accelerated aging tests indicate a long device lifetime, with the time for a cumulative failure of 1% estimated to be 15 million h at 40 degrees C for 12-mu m VCSELs.
引用
收藏
页码：226 / 231
页数：6
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