The effect of current density and stripe length on resistance saturation during electromigration testing

被引：43
|
作者：
Filippi, RG
Wachnik, RA
Aochi, H
Lloyd, JR
Korhonen, MA
机构：
[1] IBM CORP,TOSHIBA CORP,SEMICOND RES & DEV CTR,HOPEWELL JCT,NY 12533
[2] LLOYD & THOMPSON ASSOCIATES INC,STOW,MA 01775
[3] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 16期
关键词：
D O I：
10.1063/1.117521
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistance saturation as a function of current density and stripe length has been investigated for a two-level structure with Ti/TiN/AlCu/Ti/TiN stripes and interlevel W stud vias, A simple model relating the resistance change at saturation to the current density and stripe length is formulated for structures with short stripe lengths and blocking boundaries at both ends. Experimental results for stripe lengths of 25, 50, or 100 mu m are in good agreement with the model predictions. (C) 1996 American Institute of Physics.
引用
收藏
页码：2350 / 2352
页数：3
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