A Study of Vapor-Phase Deposition of Silicon Nitride Layers by Ammonolysis of Dichlorosilane at Lowered Pressure

被引：0
|
作者：
Manzha, N. M. [1 ]
机构：
[1] Technol Ctr Res & Prod Co, Moscow Inst Elect Technol, Moscow, Russia
来源：
SEMICONDUCTORS | 2010年 / 44卷 / 13期
关键词：
Silicon Nitride; Apparent Activation Energy; Bimolecular Reaction; Deposition Zone; Monosilane;
D O I：
10.1134/S1063782610130051
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Deposition kinetics of silicon nitride layers at lowered reactor pressures of 10-130 Pa and temperatures in the range 973 1073 K has been studied. The equilibrium constant of the bimolecular reaction of dichlorosilane with ammonia has been calculated. The apparent activation energies calculated taking into account the experimental growth rate nearly coincide with the experimental data. Recommendations for improving the quality of silicon nitride layers are made.
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页码：1644 / 1648
页数：5
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