Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits (vol 22, pg 5332, 2010)

被引：0
|
作者：
Frenzel, Heiko
Lajn, Alexander
von Wenckstern, Holger
Lorenz, Michael
Schein, Friedrich
Zhang, Zhipeng
Grundmann, Marius
机构：
来源：
ADVANCED MATERIALS | 2011年 / 23卷 / 12期
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：1424 / 1424
页数：1
相关论文
共 39 条
  • [21] Performance of Pd/Ge/Au/Pd/Au ohmic contacts and its application to GaAs metal-semiconductor field-effect transistors
    Lim, JW
    Mun, JK
    Kwak, MH
    Lee, JJ
    SOLID-STATE ELECTRONICS, 1999, 43 (10) : 1893 - 1900
  • [22] CHARACTERIZATION OF GAAS SELF-ALIGNED REFRACTORY-GATE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MESFET) INTEGRATED-CIRCUITS
    MAGERLEIN, JH
    WEBB, DJ
    CALLEGARI, A
    FEDER, JD
    FRYXELL, T
    GUTHRIE, HC
    HOH, PD
    MITCHELL, JW
    POMERENE, ATS
    SCONTRAS, S
    SPIERS, GD
    GREINER, JH
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 3080 - 3092
  • [23] Vertically Integrated Logic Circuits Constructed Using ZnO-Nanowire-Based Field-Effect Transistors on Plastic Substrates
    Kang, Jeongnnin
    Moon, Taeho
    Jeon, Youngin
    Kim, Hoyoung
    Kim, Sangsig
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (05) : 3526 - 3528
  • [24] RETRACTION: Recent progress on rubrene as active layer in organic field-effect transistors (Retraction of Vol 22, art no 249, 2020)
    Gu, Wen
    JOURNAL OF NANOPARTICLE RESEARCH, 2021, 23 (08)
  • [25] Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
    Kluepfel, F. J.
    Lajn, A.
    Frenzel, H.
    von Wenckstern, H.
    Grundmann, M.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [26] Stacked Lateral Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistors and Their Three-Dimensional Integrated Circuits
    Shujun Ye
    Liwei Liu
    Yuanxiao Ma
    Yeliang Wang
    Silicon, 2023, 15 : 2467 - 2478
  • [27] APPLICATION OF FOCUSED ION-BEAM IMPLANTATION TO PRODUCE GALLIUM-ARSENIDE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH A NOVEL DOPING PROFILE
    HUSSAIN, T
    CLEAVER, JRA
    AHMED, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4A): : 2087 - 2091
  • [28] Stacked Lateral Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistors and Their Three-Dimensional Integrated Circuits
    Ye, Shujun
    Liu, Liwei
    Ma, Yuanxiao
    Wang, Yeliang
    SILICON, 2023, 15 (05) : 2467 - 2478
  • [29] Fast organic electronic circuits based on ambipolar pentacene field-effect transistors (Retraction of vol 79, pg 4043, 2001)
    Schön, JH
    Kloc, C
    APPLIED PHYSICS LETTERS, 2003, 82 (08) : 1313 - 1314
  • [30] Large Scale Pattern Graphene Electrode for High Performance in Transparent Organic Single Crystal Field-Effect Transistors (vol 4, pg 3927, 2010)
    Jackson, Biyun Li
    Zhu, Jing
    Miao, Cong-Qin
    Chung, Choong-Heui
    Park, Young-Ju
    Sun, Ke
    Woo, Jason
    Xie, Ya-Hong
    ACS NANO, 2011, 5 (03) : 2412 - 2412
1234