Quantum Dot Emission Driven by Mie Resonances in Silicon Nanostructures

被引：140

作者：

Rutckaia, Viktoriia ^{[1
,2
]}

Heyrot, Frank ^{[3
]}

Novikov, Alexey ^{[4
]}

Shaleev, Mikhail ^{[4
]}

Petrov, Mihail ^{[5
,6
]}

Schilling, Joerg ^{[1
]}

机构：

[1] Martin Luther Univ Halle Wittenberg, Ctr Innovat Competence SiLi Nano, Karl Freiherr von Fritsch Str 3, D-06120 Halle, Saale, Germany

[2] Int Max Planck Res Sch Sci & Technol Nanostruct, Weinberg 2, D-06120 Halle, Saale, Germany

[3] Martin Luther Univ Halle Wittenberg, Interdisciplinary Ctr Mat Sci, Heinrich Damerow Str 4, D-06120 Halle, Saale, Germany

[4] RAS, IPM, Acad Skaya St 7, Nizhnii Novgorod 603950, Russia

[5] ITMO Univ, Dept Nanophoton & Metamat, Birzhevaya Liniya 14, St Petersburg 199034, Russia

[6] Univ Eastern Finland, Dept Phys & Math, Yliopistokatu 7, Joensuu 80101, Finland

来源：

NANO LETTERS | 2017年 / 17卷 / 11期

基金：

芬兰科学院; 俄罗斯基础研究基金会;

关键词：

Silicon nanodisks; quantum emitters; Mie resonances; self-assembled quantum dots; oligomer nanostructures; photoluminescence enhancement; ROOM-TEMPERATURE; DIELECTRIC NANOPARTICLE; 3RD-HARMONIC GENERATION; FANO RESONANCES; GE; GROWTH; ENHANCEMENT; TRANSITION; SCATTERING; ANTENNAS;

D O I：

10.1021/acs.nanolett.7b03248

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Resonant dielectric nanostructures represent a promising platform for light manipulation at the nanoscale. In this paper, we describe an active photonic system based on Ge(Si) quantum dots coupled to silicon nanodisks. We show that Mie resonances govern the enhancement of the photo-luminescent signal from embedded quantum dots due to a good spatial overlap of the emitter position with the electric field of Mie modes. We identify the coupling mechanism, which allows for engineering the resonant Mie modes through the interaction of several nanodisks. In particular, the mode hybridization in a nanodisk trimer results in an up to 10-fold enhancement of the luminescent signal due to the excitation of resonant antisymmetric magnetic and electric dipole modes.

引用

页码：6886 / 6892

页数：7

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