III-V/Si photonic integrated circuits for the mid-infrared

被引:0
|
作者
Roelkens, Gunther [1 ,2 ]
Wang, Ruijun [1 ,2 ]
Vasiliev, Anton [1 ,2 ]
Radosavljevic, Sanja [1 ,2 ]
Jia, Xiaoning [1 ,2 ]
Beneitez, Nuria Teigell [1 ,2 ]
Haq, Bahawal [1 ,2 ]
Pavanello, Fabio [1 ,2 ]
Muneeb, Muhammad [1 ,2 ]
Lepage, Guy [3 ,4 ]
Verheyen, Peter [3 ,4 ]
Van Campenhout, Joris [3 ,4 ]
Sprengel, Stephan [3 ,4 ]
Boehm, Gerhard [3 ,4 ]
Amann, Markus-Christian [3 ,4 ]
Simonyte, Ieva [5 ]
Vizbaras, Kristijonas [5 ]
Vizbaras, Augustinas [5 ]
Baets, Roel [1 ,2 ]
机构
[1] Ghent Univ Imec, Photon Res Grp, Technol Pk Zwijnaarde 15, B-9052 Ghent, Belgium
[2] Univ Ghent, Ctr Nano & Biophoton NB Photon, Ghent, Belgium
[3] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[4] Tech Univ Munich, Walter Schottky Inst, Coulombwall 4, D-85748 Garching, Germany
[5] Brolis Semicond UAB, Moletu Pl 73, LT-14259 Vilnius, Lithuania
关键词
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中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We review our work on SOI and Ge-on-SOI PICs for the mid-infrared. We demonstrate the integration of III-V semiconductors on the SOI platform for 2-4 mu m wavelength range integrated lasers and spectrometers, as well as tunable filters implemented on the Ge-on-SOI platform beyond 4 mu m.
引用
收藏
页码:133 / 133
页数:1
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