Amorphous Phosphorus-Doped Cobalt Sulfide Modified on Silicon Pyramids for Efficient Solar Water Reduction

被引:27
|
作者
Chen, Chih-Jung [1 ]
Liu, Chi-Wei [2 ,3 ]
Yang, Kai-Chih [4 ]
Yin, Li-Chang [5 ]
Wei, Da-Hua [2 ,3 ]
Hu, Shu-Fen [4 ]
Liu, Ru-Shi [1 ,2 ,3 ]
机构
[1] Natl Taiwan Univ, Dept Chem, Taipei 10617, Taiwan
[2] Natl Taipei Univ Technol, Dept Mech Engn, Taipei 10608, Taiwan
[3] Natl Taipei Univ Technol, Grad Inst Mfg Technol, Taipei 10608, Taiwan
[4] Natl Taiwan Normal Univ, Dept Phys, Taipei 11677, Taiwan
[5] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
基金
美国国家科学基金会;
关键词
water reduction; hydrogen evolution reaction; co-catalyst; P-doped cobalt sulfide; Si pyramids; PHOTOELECTROCHEMICAL HYDROGEN-PRODUCTION; MOLYBDENUM SULFIDE; MICROWIRE ARRAYS; EVOLUTION; CATALYST; LAYER; PHOTOCATHODE; ELECTROCATALYSTS; PHOSPHIDES; GENERATION;
D O I
10.1021/acsami.8b14571
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cobalt sulfide (CoSx) functioned as a co-catalyst to accelerate the kinetics of photogenerated electrons on Si photocathode, leading to the enhancement of solar hydrogen evolution efficiency. By doping phosphorus heteroatoms, CoSx materials showed an improved catalytic activity because of superior surface area and quantity of active sites. Furthermore, increased vacancies in unoccupied electronic states were observed, as more phosphorus atoms doped into CoSx co-catalysts. Although these vacant sites improved the capability to accept photoinduced electrons from Si photoabsorber, chemisorption energy of atomic hydrogen on catalysts was the dominant factor affecting in photoelectrochemical performance. We suggested that P-doped CoSx with appropriate doping quantities showed thermoneutral hydrogen adsorption. Excess phosphorus dopants in CoSx contributed to excessively strong adsorption with H atoms, causing the poor desorption ability of photocatalytic reaction. The optimal P-doped CoSx decoratedSi photocathode showed a photocurrent of -20.6 mA cm(-2) at 0 V. Moreover, a TiO2 thin film was deposited on the Si photocathode as a passivation layer for improving the durability. The current density of 10 nm TiO2-modified photocathode remained at approximately -13.3 mA cm(-2) after 1 h of chronoamperometry.
引用
收藏
页码:37142 / 37149
页数:8
相关论文
共 50 条
  • [31] Properties of Phosphorus-Doped Silicon-Rich Amorphous Silicon Carbide Film Prepared by a Solution Process
    Masuda, Takashi
    Iwasaka, Akira
    Takagishi, Hideyuki
    Shimoda, Tatsuya
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2016, 99 (05) : 1651 - 1656
  • [32] PREPARATION AND CHARACTERIZATION OF BORON-DOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON NITRIDE FILMS
    FANG, YK
    HUANG, CF
    CHANG, CY
    LEE, RH
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1222 - 1225
  • [33] Amorphous phosphorus-doped MoS2 catalyst for efficient hydrogen evolution reaction
    Wang, Dezhi
    Xie, Yingying
    Wu, Zhuangzhi
    [J]. NANOTECHNOLOGY, 2019, 30 (20)
  • [34] Phosphorus-doped silicon quantum dots for all-silicon quantum dot tandem solar cells
    ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney, 2052, Australia
    不详
    不详
    不详
    [J]. Sol Energ Mater Sol Cells, 9 (1524-1530):
  • [35] Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells
    Stuckelberger, Josua
    Nogay, Gizem
    Wyss, Philippe
    Ingenito, Andrea
    Allebe, Christophe
    Horzel, Joerg
    Kamino, Brett A.
    Despeisse, Matthieu
    Haug, Franz-Josef
    Loeper, Philipp
    Ballif, Christophe
    [J]. IEEE JOURNAL OF PHOTOVOLTAICS, 2018, 8 (02): : 389 - 396
  • [36] ELECTRON-DIFFRACTION STUDY OF THE STRUCTURE OF BORON-DOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
    LIU, ZQ
    MCKENZIE, DR
    COCKAYNE, DJH
    DWARTE, DM
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (06): : 753 - 761
  • [38] NUCLEATION AND CRYSTALLIZATION CHARACTERISTICS OF PHOSPHORUS-DOPED AMORPHOUS-SILICON SLIT NANO-WIRE
    WADA, Y
    KOBAYASHI, T
    KURE, T
    YOSHIMURA, T
    SUDOU, Y
    GOTOU, Y
    KONDO, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (05) : 1392 - 1397
  • [39] NOVEL PASSIVATION DIELECTRICS - THE BORON-DOPED OR PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS
    CHANG, CY
    FANG, YK
    HUANG, CF
    WU, BS
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 418 - 422
  • [40] EVIDENCE FOR THE HYDROGEN-GLASS MODEL OF METASTABILITY ANNEALING IN PHOSPHORUS-DOPED AMORPHOUS-SILICON
    BRANZ, HM
    IWANICZKO, E
    [J]. PHYSICAL REVIEW B, 1993, 48 (23) : 17114 - 17120