Transient thermal analysis of InGaAsP-InP high-power diode laser arrays with different fill factors

被引:11
|
作者
Gourevitch, A [1 ]
Laikhtman, B
Westerfeld, D
Donetsky, D
Belenky, G
Trussell, CW
Shellenbarger, Z
An, H
Martinelli, RU
机构
[1] SUNY Stony Brook, Stony Brook, NY 11794 USA
[2] Power Photon, Stony Brook, NY 11794 USA
[3] USA, Nevada & Environm & Safety Directorate, Ft Belvoir, VA 22060 USA
[4] Sarnoff Corp, Princeton, NJ 08543 USA
[5] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
基金
以色列科学基金会;
关键词
D O I
10.1063/1.1884251
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature kinetics of InGaAsP/InP high-power laser diode arrays with different fill factors was studied experimentally and theoretically. It was shown that except during a short initial period, the laser array heating is determined by the heat flux propagation through the heat spreader. To characterize this heating, we developed a two-dimensional analytical model. Experimentally, the temperature change in the active region was obtained by measuring the laser spectrum's temporal evolution during a single current pulse. Three distinctive periods in the transient heating process were clearly identified-an initial temperature rise, a square-root-of-time dependence of the active-region temperature increase, and an exponential approach of the active-region temperature to its steady-state value. We demonstrated that in the initial period of time, the heat propagates within the laser bar structure, and the laser bar design (fill factor) strongly affects the active-region temperature rise. In the later periods the temperature kinetics is insensitive to the fill factor. (C) 2005 American Institute of Physics.
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页数:6
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