Coupled Circuit Device Simulation

被引：1

作者：

Bittner, Kai ^{[1
]}

Brachtendorf, Hans Georg ^{[1
]}

Schoenmaker, Wim ^{[2
]}

Strohm, Christian ^{[3
]}

Tischendorf, Caren ^{[3
]}

机构：

[1] Univ Appl Sci Upper Austria, Hagenberg, Austria

[2] MAGWEL NV, Leuven, Belgium

[3] Humboldt Univ, Dept Math, Berlin, Germany

来源：

SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING, SCEE 2016 | 2018年 / 28卷

关键词：

D O I：

10.1007/978-3-319-75538-0_7

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The goal of coupled circuit-field simulation is to test a complex device described by a full 3D field model in the environment of a larger circuit. We present here an approach, which treats the field model as device with a large number of internal unknowns and equations.

引用

页码：69 / 77

页数：9

共 50 条

[21] PRACTICAL INTEGRATION OF PROCESS, DEVICE, AND CIRCUIT SIMULATION
SOKEL, RJ
MACMILLEN, DB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) : 2110 - 2116
[22] Device and circuit simulation of printed polymer electronics
Bartzsch, Matthias
Kempa, Heiko
Otto, Michael
Huebler, Arved
Zielke, Dirk
ORGANIC ELECTRONICS, 2007, 8 (04) : 431 - 438
[23] Device Degradation Models for Circuit Reliability Simulation
Sasse, Guido
2013 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IRW), 2013, : 42 - 42
[24] Circuit Envelope Physical Semiconductor Device Simulation
Morton, Chris G.
2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
[25] A universal device model for nanoelectronic circuit simulation
Ziegler, MM
Rose, GS
Stan, MR
PROCEEDINGS OF THE 2002 2ND IEEE CONFERENCE ON NANOTECHNOLOGY, 2002, : 83 - 88
[26] NEW ALGORITHMS FOR CIRCUIT SIMULATION OF DEVICE BREAKDOWN
DIAZ, CH
KANG, SM
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1992, 11 (11) : 1344 - 1354
[27] Device Modeling for Circuit Simulation in Nanometer Technology
Liu, Zhihong
2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2016, : 2 - 2
[28] Part IV Circuit and Device Modelling and Simulation
SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING (SCEE 2010), 2012, 16 : 253 - 255
[29] Large signal analysis of AlGaN/GaN-HEMT amplifier by coupled physical device-circuit simulation
Fujishiro, HI
Narita, S
Tomita, Y
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07): : 1866 - 1871
[30] A coupled circuit and device simulator for design of RF MEMS VCOs
Behera, M
De, S
Aluru, N
Mayaram, K
2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS, 2003, : 347 - 350

← 1 2 3 4 5 →