Electron-impact ionization of Sn4+

被引：6
|
作者：
Jonauskas, Valdas [1 ]
机构：
[1] Vilnius Univ, Inst Theoret Phys & Astron, Sauletekio Av 3, LT-10257 Vilnius, Lithuania
来源：
JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER | 2019年 / 239卷
关键词：
Atomic data; Electron impact ionization; Tin; TIN; CONFIGURATION; ABUNDANCE; SPECTRA; IONS;
D O I：
10.1016/j.jqsrt.2019.106659
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Electron-impact single ionization is investigated for the Sn4+ ion by performing level-to-level calculations. Study includes ionization from the ground 4d(10) and excited 4d(9)5s configurations. It is shown that the total cross sections for the excited configuration are approximately by a factor of three higher compared to the ones of the ground configuration. Large contribution from the indirect process determines data for the 4d(9)5s configuration. Comparison with experimental values for the cross sections shows that similar to 15% of the ions in the beam reside in the metastable states. The Maxwellian rate coefficients for the electronimpact ionization from the ground and 4d(9)5s configurations are presented. (C) 2019 Elsevier Ltd. All rights reserved.
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页数：6
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