Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (110) substrates by LPCVD

被引：6
|
作者：
Zheng, Haiwu [1 ,2 ]
Su, Hanfeng [1 ]
Fu, Zhuxi [1 ]
Li, Guang [1 ]
Li, Xiaoguang [1 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China
[2] Henan Univ, Sch Phys & Elect, Inst Phys Microsyst, Kaifeng 475004, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2008年 / 34卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Si (110); 3C-SiC film; surface morphology; LPCVD;
D O I：
10.1016/j.ceramint.2007.02.011
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Cubic SiC (3C-SiC) film has been deposited on Si (1 1 0) substrate by the low pressure chemical vapor deposition (LPCVD) with gas sources of SiH4, C3H8 and carrier gas of H-2. The 3C-SiC crystalline film can be confirmed through the observations using reflection high-energy electron diffraction (RHEED) images. The X-ray diffraction (XRD) pattern and the rocking curve indicate that the (1 1 1) plane of SiC film is parallel to the surface of the Si (1 1 0) substrate and the film is of high crystallinity. The results of the field emission scanning electron microscope (FESEM) images show that the film has smooth surface morphology. Transmitted electron diffraction (TED) pattern and high resolution transmission electron microscope (HRTEM) image further confirm the high quality of the film. (c) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码：657 / 660
页数：4
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