Transient electromagnetically induced transparency in self-assembled quantum dots

被引:94
|
作者
Marcinkevicius, S. [1 ]
Gushterov, A. [2 ]
Reithmaier, J. P. [2 ]
机构
[1] Royal Inst Technol, Dept Microelect & Appl Phys, S-16440 Kista, Sweden
[2] Univ Kassel, Inst Nanostruct Technol & Analyt, D-34132 Kassel, Germany
关键词
D O I
10.1063/1.2840160
中图分类号
O59 [应用物理学];
学科分类号
摘要
A coherent absorption dip in pump-probe experiment performed on a ten layer optically thin InGaAs/GaAs quantum dot (QD) structure has been observed. Measurements performed for different wavelengths, polarizations, pulse widths, and temperatures allow assigning the dip to electromagnetically induced transparency (EIT). The EIT scheme is based on coupling of excitons with different spins in asymmetric QDs. Using spectrally narrow pulses, detrimental effect of the inhomogeneous broadening is reduced since only the QDs with transitions resonant with the pulse wavelength are addressed and participate in the EIT. The effect has been observed at temperatures up to 140 K.
引用
收藏
页数:3
相关论文
共 50 条
  • [1] Transient electromagnetically induced transparency in InGaAs quantum dots
    Department of Microelectronics and Applied Physics, Royal Institute of Technology, Electrum 229, 16440 Kista, Switzerland
    不详
    [J]. Optics InfoBase Conference Papers, 2008,
  • [2] Transient electromagnetically induced transparency in InGaAs quantum dots
    Marcinkevicius, S.
    Gusterov, A.
    Reithmaier, J. P.
    [J]. 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 3597 - +
  • [3] Transient optical excitation and control in self-assembled quantum dots
    Lenihan, A.S.
    Dutt, M.V.G.
    Steel, D.G.
    Schoenfeld, W.
    Petroff, P.M.
    [J]. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 2000,
  • [4] Tunnelling transient spectroscopy on self-assembled InAs quantum dots
    Schramm, A.
    Schulz, S.
    Schaefer, J.
    Heyn, Ch.
    Hansen, W.
    [J]. PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 763 - +
  • [5] Self-assembled quantum dots
    Univ of Nottingham, Nottingham, United Kingdom
    [J]. III Vs Rev, 3 (25-30):
  • [6] Transient linear dichroism in InAs/GaAs self-assembled quantum dots
    Tribollet, J
    Maingault, L
    Lemaître, A
    Sermage, B
    Gérard, JM
    Bernardot, F
    Testelin, C
    Chamarro, M
    [J]. 8TH CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS-8), 2004, : 585 - 588
  • [7] Laplace deep level transient spectroscopy on self-assembled quantum dots
    Schnorr, L.
    Heinzel, T.
    Scholz, S.
    Ludwig, A.
    Wieck, A. D.
    [J]. JOURNAL OF APPLIED PHYSICS, 2018, 124 (10)
  • [8] Composition of self-assembled quantum dots
    Lang, C
    [J]. MATERIALS SCIENCE AND TECHNOLOGY, 2003, 19 (04) : 411 - 421
  • [9] An introduction to self-assembled quantum dots
    Riel, B. J.
    [J]. AMERICAN JOURNAL OF PHYSICS, 2008, 76 (08) : 750 - 757
  • [10] Self-assembled semiconductor quantum dots
    Warburton, RJ
    [J]. CONTEMPORARY PHYSICS, 2002, 43 (05) : 351 - 364