Optical properties of stepped InxGa1-xAs/GaAs quantum wells

被引：2
|
作者：
D'Andrea, A [1 ]
Tomassini, N
Ferrari, L
Righini, M
Selci, S
Bruni, MR
Schiumarini, D
Simeone, MG
机构：
[1] CNR, MITER, Ist Metodol Avanzate Inorgan, I-00016 Rome, Italy
[2] CNR, Ist Struttura Mat, Rome, Italy
[3] CNR, MITER, Ist Chim Mat, I-00016 Rome, Italy
来源：
MICROELECTRONIC ENGINEERING | 1998年 / 43-4卷
关键词：
excitons; polaritons; strained III-V semiconductors;
D O I：
10.1016/S0167-9317(98)00172-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic study of InxGa1-xAs/InyGa1-yAs/GaAs(001) stepped quantum wells with indium composition x = 14.9% and y = 6.4% and thicknesses in the range of quasi-two-dimensional behaviour of Wannier excitons is performed. Optical spectra are compared with model calculations obtained by an accurate exciton envelope function. We point out that optical spectroscopy is a tool for studying indium diffusion in stepped wells, and this property is crucial in order to obtain second harmonic generation enhanced with respect to the bulk value. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：259 / 263
页数：5
相关论文
共 50 条
  • [41] Electron Microscopy of Cracks in InxGa1-xAs/GaAs(001) Multi-Quantum Wells
    Atici, Y.
    Yildiz, K.
    Akgul, U.
    ACTA PHYSICA POLONICA A, 2015, 127 (03) : 859 - 862
  • [42] EXCITON BINDING-ENERGY IN INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS
    HOU, HQ
    SEGAWA, Y
    AOYAGI, Y
    NAMBA, S
    ZHOU, JM
    PHYSICAL REVIEW B, 1990, 42 (02): : 1284 - 1289
  • [43] HOT CARRIER PHOTOLUMINESCENCE FROM STRAINED INXGA1-XAS/GAAS SINGLE QUANTUM WELLS
    ANDERSSON, TG
    CHEN, ZG
    XU, ZY
    XU, JZ
    GE, WK
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 215 - 219
  • [44] Larmor beats and conduction electron g factors in InxGa1-xAs/GaAs quantum wells
    Malinowski, A
    Guerrier, DJ
    Traynor, NJ
    Harley, RT
    PHYSICAL REVIEW B, 1999, 60 (11): : 7728 - 7731
  • [45] AN INVESTIGATION OF INXGA1-XAS/GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    JEONG, J
    SHAHID, MA
    LEE, JC
    SCHLESINGER, TE
    MILNES, AG
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5464 - 5468
  • [46] BINDING-ENERGY OF SHALLOW ACCEPTORS IN INXGA1-XAS/GAAS STRAINED QUANTUM WELLS
    ROTH, AP
    MORRIS, D
    MASUT, RA
    LACELLE, C
    JACKMAN, JA
    PHYSICAL REVIEW B, 1988, 38 (11): : 7877 - 7880
  • [47] INXGA1-XAS GAAS PSEUDOMORPHIC QUANTUM-WELLS - GROWTH AND THERMAL-STABILITY
    NICKEL, H
    LOSCH, R
    SCHLAPP, W
    LEIER, H
    FORCHEL, A
    SURFACE SCIENCE, 1990, 228 (1-3) : 340 - 343
  • [48] Effect of Inp passivation on carrier recombination in InxGa1-xAs/GaAs surface quantum wells
    Lipsanen, H
    Sopanen, M
    Ahopelto, J
    Sandmann, A
    Feldmann, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1133 - 1134
  • [49] Effect of InP passivation on carrier recombination in InxGa1-xAs/GaAs surface quantum wells
    Lipsanen, Harri
    Sopanen, Markku
    Ahopelto, Jouni
    Sandmann, Jörg
    Feldmann, Jochen
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1133 - 1134
  • [50] ZEEMAN SPLITTING OF THE EXCITONIC RECOMBINATION IN INXGA1-XAS/GAAS SINGLE QUANTUM-WELLS
    WIMBAUER, T
    OETTINGER, K
    EFROS, AL
    MEYER, BK
    BRUGGER, H
    PHYSICAL REVIEW B, 1994, 50 (12): : 8889 - 8892
12345