Unveiling universal trends for the energy level alignment in organic/oxide interfaces

被引:10
|
作者
Martinez, Jose I. [1 ]
Flores, Fernando [2 ,3 ]
Ortega, Jose [2 ,3 ]
Rangan, Sylvie [4 ,5 ]
Ruggieri, Charles M. [4 ,5 ]
Bartynski, Robert A. [4 ,5 ]
机构
[1] CSIC, Inst Mat Sci Madrid, Dept Surfaces Coatings & Mol Astrophys, Mat Sci Factory,ICMM, Sor Juana Ines Cruz 3, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, ES-28049 Madrid, Spain
[3] Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, ES-28049 Madrid, Spain
[4] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[5] Rutgers State Univ, Lab Surface Modificat, Piscataway, NJ 08854 USA
关键词
ELECTRONIC-STRUCTURES; TRANSITION; ENERGETICS; MOLECULES; FORCES; OXIDES;
D O I
10.1039/c7cp03853d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this perspective we present a comprehensive analysis of the energy level alignment at the interface between an organic monolayer (organic = perylenetetracarboxylic dianhydride, PTCDA, zinc tetraphenylporphyrin, Zn-TPP, and tetracyanoquinodimethane, TCNQ) and a prototypical oxide surface, TiO2(110), looking for universal behaviours. PTCDA shows a physisorbed interaction with TiO2 and a small interface dipole potential with its highest occupied molecular orbital (HOMO) energy level located in the oxide energy gap and the lowest occupied molecular orbital (LUMO) energy level located above the oxide conduction band minimum, E-C. We analyse how the interface barrier depends on an external bias potential between the organic layer and the oxide surface, D, and find for this interface that the screening parameter S = d vertical bar(EC - HOMO)vertical bar d Delta is close to 1. In the second case, the Zn- TPP monolayer shows a moderate chemisorbed interaction with some charge transfer from the molecule to the oxide and a significant interface dipole potential, in such a way that S decreases to around 0.8. In the TCNQ/TiO2( 110) case, the TCNQ molecules present a strong chemical interaction with the oxide; the LUMO energy level is located in the oxide energy gap in such a way that one electron is transferred from the oxide to the organic molecule; we also find that in this case S approximate to 0.5. All these cases can be integrated within a universal behaviour when (EC - HOMO) is calculated as a function of D; that function presents a zig-zag curve with a central part having an S-slope, and two plateaus associated with either the LUMO or the HOMO energy levels crossing the oxide Fermi level. In these plateaus, a Coulomb blockade regime arises and a pace charge layer develops in the oxide surface.
引用
收藏
页码:24412 / 24420
页数:9
相关论文
共 50 条
  • [21] Energy level alignment and band bending at model interfaces of organic electroluminescent devices
    Ishii, H
    Oji, H
    Ito, E
    Hayashi, N
    Yoshimura, D
    Seki, K
    JOURNAL OF LUMINESCENCE, 2000, 87-9 : 61 - 65
  • [22] Energy Level Alignment at Metal/Solution-Processed Organic Semiconductor Interfaces
    Atxabal, Ainhoa
    Braun, Slawomir
    Arnold, Thorsten
    Sun, Xiangnan
    Parui, Subir
    Liu, Xianjie
    Gozalvez, Cristian
    Llopis, Roger
    Mateo-Alonso, Aurelio
    Casanova, Felix
    Ortmann, Frank
    Fahlman, Mats
    Hueso, Luis E.
    ADVANCED MATERIALS, 2017, 29 (19)
  • [23] Energy-level alignment at strongly coupled organic-metal interfaces
    Chen, Meng-Ting
    Hofmann, Oliver T.
    Gerlach, Alexander
    Broeker, Benjamin
    Buerker, Christoph
    Niederhausen, Jens
    Hosokai, Takuya
    Zegenhagen, Joerg
    Vollmer, Antje
    Riegel, Ralph
    Muellen, Klaus
    Schreiber, Frank
    Salzmann, Ingo
    Koch, Norbert
    Zojer, Egbert
    Duhm, Steffen
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2019, 31 (19)
  • [24] Strain Effects on the Energy-Level Alignment at Metal/Organic Semiconductor Interfaces
    Atxabal, Ainhoa
    McMillan, Stephen R.
    Garcia-Arruabarrena, Benat
    Parui, Subir
    Llopis, Roger
    Casanova, Felix
    Flatte, Michael E.
    Hueso, Luis E.
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (13) : 12717 - 12722
  • [25] A comprehensive and unified picture of energy-level alignment at interfaces with organic semiconductors
    Akaike, Kouki
    Oehzelt, Martin
    Heimel, Georg
    Koch, Norbert
    ORGANIC LIGHT EMITTING MATERIALS AND DEVICES XX, 2016, 9941
  • [26] Organic semiconductor density of states controls the energy level alignment at electrode interfaces
    Oehzelt, Martin
    Koch, Norbert
    Heimel, Georg
    NATURE COMMUNICATIONS, 2014, 5
  • [27] Organic semiconductor density of states controls the energy level alignment at electrode interfaces
    Martin Oehzelt
    Norbert Koch
    Georg Heimel
    Nature Communications, 5
  • [28] Energy level alignment and morphology of interfaces between molecular and polymeric organic semiconductors
    Zhang, Ft
    Vollmer, A.
    Zhang, J.
    Xu, Z.
    Rabe, J. P.
    Koch, N.
    ORGANIC ELECTRONICS, 2007, 8 (05) : 606 - 614
  • [29] Calculating the Universal Energy-Level Alignment of Organic Molecules on Metal Oxides
    Ley, Lothar
    Smets, Yaou
    Pakes, Christopher I.
    Ristein, Juergen
    ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (07) : 794 - 805
  • [30] Energy level alignment and interactive spin polarization at organic/ferromagnetic metal interfaces for organic spintronics
    Sun, Zhengyi
    Zhan, Yiqiang
    Shi, Shengwei
    Fahlman, Mats
    ORGANIC ELECTRONICS, 2014, 15 (09) : 1951 - 1957