Zn1-xMnxTe-based diluted magnetic semiconductor nanowire structures grown by MBE

被引：0

作者：

Zaleszczyk, W. ^{[1
]}

Janik, E. ^{[1
]}

Dluzewski, P. ^{[1
]}

Kret, S. ^{[1
]}

Szuszkiewicz, W. ^{[1
]}

Presz, A. ^{[2
]}

Morhange, J. F. ^{[3
]}

Dynowska, E. ^{[1
]}

Petroutchik, A. ^{[1
]}

Baczewski, L. T. ^{[1
]}

Karczewski, G. ^{[1
]}

Kirmse, H.

Neumann, W. ^{[4
]}

Wojtowicz, T. ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Inst High Pressure Phys, PL-01142 Warsaw, Poland

[3] Univ Paris 04, CNRS, Inst Nanosci, F-75015 Paris, France

[4] Humboldt Univ, D-12489 Berlin, Germany

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

关键词：

molecular beam epitaxy; II-VI compounds; nanowires; diluted magnetic semiconductor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the catalytically enhanced molecular beam epitaxial growth of Zn1-xMnxTe-based nanowire structures, with manganese content up to x=0.6, and on their basic structural and optical properties. The measurements that have been carried out confirm the incorporation of Mn2+ ions in the cation substitutional sites of ZnTe lattice.

引用

页码：267 / +

页数：2

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