Field-Free Deterministic Writing of Spin-Orbit Torque Magnetic Tunneling Junction by Unipolar Current

We propose a field-free magnetic switching method in a perpendicular spin-orbit torque magnetic tunneling junction on a 200 mm wafer. The field-free switching can be achieved by unipolar current pulses via engineering the interlayer exchange coupling in the thin ferromagnetic films. The proposed device can reach a high writing speed of up to 1 ns and work properly at temperature of 100 degrees C. This novel unipolar switching scheme offers an alternative writing approach for spin-orbit torque magnetic random access memory.