An Integrated SiC CMOS Gate Driver

被引：0

作者：

Barlow, Matthew ^{[1
]}

Ahmed, Shamim ^{[1
]}

Mantooth, H. Alan ^{[1
]}

Francis, A. Matt ^{[2
]}

机构：

[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

[2] Ozark Integrated Circuits Inc, Fayetteville, AR USA

来源：

APEC 2016 31ST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION | 2016年

关键词：

high-temperature electronics; driver circuits; silicon carbide;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, the first reported integrated silicon carbide (SiC) CMOS gate driver is presented. The gate driver is designed in a 15V, 1.2 mu m silicon carbide CMOS process, and simulated from 25 degrees C to 300 degrees C. The gate drivers are packaged and tested over a wide temperature range. Measured peak output current exceeds the 4 A source, 8 A sink current design goals at room temperature. The measured gate driver rise and fall times are 74.2 ns and 36.8 ns, respectively, while driving a SiC power MOSFET at a package temperature above 500 degrees C. Switching operation is demonstrated while at temperature.

引用

页码：1646 / 1649

页数：4

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