Application of CdSe-PVK Nanocomposite as a Hole Transport Layer for OLEDs

被引：0

作者：

Mozaffari, Morteza ^{[1
]}

Amiri, Shima ^{[2
]}

Jafarzadeh, Mohammad ^{[3
]}

Fallah, Hamid Reza ^{[1
]}

Shatooti, Sara ^{[2
]}

机构：

[1] Univ Isfahan, Dept Phys, Fac Sci, Esfahan 8174673441, Iran

[2] Razi Univ, Fac Sci, Dept Phys, Kermanshah 6714967346, Iran

[3] Razi Univ, Fac Chem, Kermanshah 6714967346, Iran

来源：

JOURNAL OF THE CHINESE CHEMICAL SOCIETY | 2016年 / 63卷 / 10期

关键词：

Organic light-emitting diodes; Poly(N-vinylcarbazole); Cadmium selenide; Nanocomposite; Hole transport layer; LIGHT-EMITTING-DIODES; CONJUGATED POLYMERS; DEVICES; ELECTROLUMINESCENCE; NANOCRYSTALS; EFFICIENCY; INJECTION; PROGRESS; FILM;

D O I：

10.1002/jccs.201600101

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An organic light-emitting diode was fabricated using cadmium selenide (CdSe)/poly(N-vinylcarbazole) nanocomposite as the hole transport layer (HTL). The CdSe nanoparticles (NPs) with a mean crystallite size of 6.2 nm were prepared by high-energy ball milling. Based on the current-voltage curves, the threshold voltage (V-th) of the composite diode was found to be similar to 1.3 +/- 0.1 V lower than that of the diode without CdSe, with a significant increase in the current density for the composite diode. Moreover, the electroluminescence (EL) properties (luminous flux, emittance, and intensity) of the diode were found to be enhanced by similar to 16% with respect to those of the diode without CdSe. The decrease of the threshold voltage and the increase of the current density and the EL were due to the CdSe NPs that operate as hole trap centers in the HTL.

引用

页码：886 / 892

页数：7

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