Thermal expansion of GaSb measured by temperature dependent x-ray diffraction

被引：9

作者：

Nilsen, Tron Arne ^{[1
]}

Breivik, Magnus ^{[1
]}

Myrvagnes, Geir ^{[1
]}

Fimland, Bjorn-Ove ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

gallium compounds; III-V semiconductors; lattice constants; tellurium; thermal expansion; X-ray diffraction; LATTICE-PARAMETER; EPITAXIAL LAYERS;

D O I：

10.1116/1.3336341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-ray diffraction measurements were performed using a modified zone technique on Te-doped GaSb wafers, commonly used for molecular beam epitaxial growth, at temperatures between 32 and 546 degrees C to determine the thermal expansion. The authors found the thermal expansion to be very close to the data published by Bublik [Phys. Status Solidi A 73, K271 (1982)]. Control measurements of the lattice constant of Si were found to agree with the results published by Okada and Tokumaru [J. Appl. Phys. 56, 314 (1984)] within our measurement error of +/- 2x10(-4) A degrees. A fourth order polynomial, a((GaSb))(T)=6.0959+3.37x10(-5)T+5.63x10(-8)T(2)-1.29x10(-10)T(3)+1.05x10(-13)T(4) (A degrees) (T in degrees C), was found to be a good fit to our data, while a linear fit with a constant thermal expansion coefficient of 7.17x10(-6) K-1 was found to be a poorer fit. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3336341]

引用

页数：4

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