Preparation of Titanium Silicide Nanowires by APCVD Method

被引：0
|
作者：
Ren, Zhaodi [1 ]
Shen, Mei [1 ]
Han, Gaorong [1 ]
Weng, Wenjian [1 ]
Ma, Ning [1 ]
Du, Piyi [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
来源：
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年
关键词：
FIELD-EMISSION PROPERTIES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Titanium silicide nanowires were deposited at different deposition conditions on glass substrate by using SiH4, TiCl4 and N-2 as the Si, Ti precursors and diluted gas respectively through atmosphere pressure chemical vapor deposition (APCVD) method. By using proper deposition conditions, orthorhombic TiSi single-crystal nanowires can be successful formed on the glass substrate. The diameters of nanowires that being formd are 15-40nm while the length of the nanowires are about 1-2 mu m.
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页码：111 / 112
页数：2
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