1.3 μm quantum-dot lasers with improved high temperature properties

被引：0

作者：

Klopf, F ^{[1
]}

Krebs, R ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICIPRM.2001.929179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/GaInAs-quantum-dot lasers emitting at 1.3 mum have been grown by solid source molecular beam epitaxy, and the device performance has been studied. Laser structures with 6 dot layers in the active region yield the best results. They show low transparency current densities and high characteristic temperatures. Ridge waveguide lasers with a cavity length of 400 mum and high reflectivity coatings exhibit low threshold currents of 6 mA and high output powers of 18 mW in continuous wave (cw) operation at room temperature. Unmounted devices can be operated in cw mode beyond 80 degreesC. In pulsed mode laser operation above 150 degreesC could be achieved with uncoated 800 mum long devices.

引用

页码：473 / 476

页数：4

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