High Aspect Ratio Ternary Zn1-xCdxO Nanowires by Electrodeposition for Light-Emitting Diode Applications

被引:69
|
作者
Lupan, Oleg [1 ]
Pauporte, Thierry [1 ]
Le Bahers, Tangui [1 ]
Ciofini, Ilaria [1 ]
Viana, Bruno [2 ]
机构
[1] Chim ParisTech, LECIME, CNRS, UMR 7575, F-75231 Paris 05, France
[2] UPMC, Lab Chim Mat Condensee Paris, CNRS, ENSCP,UMR 7574, F-75005 Paris, France
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2011年 / 115卷 / 30期
关键词
ALIGNED ZNCDO NANORODS; DOPED ZNO NANOWIRES; OXIDE THIN-FILMS; OPTICAL-PROPERTIES; ZINC-OXIDE; ROOM-TEMPERATURE; GROWTH; FABRICATION; CD; PHOTOLUMINESCENCE;
D O I
10.1021/jp202608e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present a combined experimental and computational approach to study Zn1-xCdxO nanowires (NWs) and their integration in light-emitting diode (LED) structures. Self-standing Zn1-xCdxO NWs have been electrodeposited on fluorine-doped tin oxide and p-GaN substrates. The electrochemical behavior has been studied, and the reaction mechanism is discussed. Low-dimensional Zn1-xCdxO structures have been obtained for CdCl2 concentrations in the deposition bath lower than 6 mu M whereas at higher concentration it is admixed with crystallized CdO and the aspect ratio of the wires is decreased. According to scanning electron microscopy observations, the Zn1-xCdxO NWs have a higher aspect ratio (> 30) than pure ZnO NWs (similar to 20) grown in similar conditions. Analyses show that the ZnO is doped with cadmium incorporated within ZnO NWs and that Cd doping increases with increasing Cd(II) content in the deposition bath. X-ray diffraction studies show increased lattice parameters in Cd-alloyed ZnO NWs. Photoluminescence studies on pure ZnO and Zn1-xCdxO NWs show the near band-edge emission red shifted by 3-7 nm as a function of Cd(II) concentration (4 or 8 mu M in the electrolyte). The structural and optical properties of the prepared materials have been interpreted using density functional theory (DFT) to computationally simulate the effect of Cd substitution for Zn in the ZnO lattice. DFT calculations show that the crystal lattice parameters increase with the partial replacement of Zn atoms by Cd and that the band gap enlargement is due to the increased lattice parameters. We demonstrate the possibility to tailor the electroluminescence emission wavelength by cadmium doping in ZnO nanowires integrated in Zn1-xCdxO NWs/p-GaN heterojunction based LED structures. Reported results are of great interest for the research on band gap engineering, of low-dimensional zinc oxide by doping/alloying NWs and for wavelength-tunable LED applications.
引用
收藏
页码:14548 / 14558
页数:11
相关论文
共 50 条
  • [41] Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer
    Chang, Li-Chuan
    Chen, Yu-An
    Kuo, Cheng-Huang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (07) : 2443 - 2447
  • [42] High-Performance Nondoped Organic Light-Emitting Diode Based on a Thermally Activated Delayed Fluorescence Emitter with 1D Intermolecular Hydrogen Bonding Interactions
    Shi, Yi-Zhong
    Wang, Kai
    Fan, Xiao-Chun
    Chen, Jia-Xiong
    Ou, Xue-Mei
    Yu, Jia
    Jie, Jian-Sheng
    Lee, Chun-Sing
    Zhang, Xiao-Hong
    ADVANCED OPTICAL MATERIALS, 2021, 9 (16)
  • [43] Toward one-hundred-watt-level applications of quantum dot converters in high-power light-emitting diode system using water-cooling remote structure
    Li, Zong-Tao
    Chen, Yong-Jun
    Li, Jia-Sheng
    Liang, Shun-Ming
    Tang, Yong
    APPLIED THERMAL ENGINEERING, 2020, 179
  • [44] Vapor-Assisted Solution Approach for High-Quality Perovskite CH3NH3PbBr3 Thin Films for High-Performance Green Light-Emitting Diode Applications
    Ji, Huifang
    Shi, Zhifeng
    Sun, Xuguang
    Li, Ying
    Li, Sen
    Lei, Lingzhi
    Wu, Di
    Xu, Tingting
    Li, Xinjian
    Du, Guotong
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (49) : 42893 - 42904
  • [45] High-Quality Uniaxial InxGa1-xN/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and Light-Emitting Diode (LED) Fabrication
    Ra, Yong-Ho
    Navamathavan, R.
    Park, Ji-Hyeon
    Lee, Cheul-Ro
    ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (06) : 2111 - 2117
  • [46] Chlorophyl-Passivated Ytterbium-Doped Perovskite Quantum-Cutting Film for High-Performance Solar Energy Conversion and Near-Infrared Light-Emitting Diode Applications
    Sun, Xiaomei
    Liu, Shuainan
    Zhou, Donglei
    Ding, Nan
    Wang, Tianyuan
    Wang, Yuqi
    Wang, Yue
    Li, Wei
    Song, Hongwei
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2024, 15 (10): : 2665 - 2674
  • [47] High-Performance (AlxGa1-x)0.5In0.5P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure
    Lee, Yea-Chen
    Kuo, Hao-Chung
    Lee, Chia-En
    Lu, Tien-Chang
    Wang, Shing-Chung
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (21-24) : 1950 - 1952
  • [48] Efficient and Near-Zero Thermal Quenching Cr3+-Doped Garnet-Type Phosphor for High-Performance Near-Infrared Light-Emitting Diode Applications
    Yang, Zaifa
    MOLECULES, 2024, 29 (17):
  • [49] Low Specific Contact Resistance of Gallium Zinc Oxide Prepared by Atomic Layer Deposition Contact on p+-GaAs for High-Speed Near-Infrared Light-Emitting Diode Applications
    Chen, Shang-Fu
    Syu, He-Long
    Liao, Chien-Lan
    Chang, Yung-Fu
    Huang, Chi-Chen
    Ho, Chong-Lung
    Wu, Meng-Chyi
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (08) : 972 - 974
  • [50] High electroluminescent properties of conjugated copolymers from poly[9,9-dioctylfluorenyl-2,7-vinylene]-co-(2-(3-dimethyidodecylsilylphenyl)-1,4-phenylene vinylene)] for light-emitting diode applications
    Jin, SH
    Jung, HH
    Hwang, CK
    Koo, DS
    Shin, WS
    Kim, YI
    Lee, JW
    Gal, YS
    JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 2005, 43 (21) : 5062 - 5071