共 50 条
- [1] Role of HfO2/SiO2 Gate Dielectric on the Reduction of Low-Frequent Noise and the Enhancement of a-IGZO TFT Electrical Performance JOURNAL OF DISPLAY TECHNOLOGY, 2012, 8 (12): : 695 - 698
- [2] Electrical Characteristics of a-IGZO TFTs With SiO2 Gate Insulator Prepared by RF Sputtering JOURNAL OF DISPLAY TECHNOLOGY, 2016, 12 (03): : 268 - 272
- [4] Performances of Self-Aligned Top-Gate a-IGZO TFTs with Ultrathin PECVD SiO2 Gate Dielectric 2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020), 2020,
- [5] Low-frequency noise study of nMOSFETs with HfO2 gate dielectric PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II, 2004, 2003 (22): : 319 - 331
- [7] Impact of hydrogen diffusion on electrical characteristics of IGZO TFTs passivated by SiO2 or Al2O3 2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2014, : 149 - 152
- [9] Low frequency noise characteristics of TaSiN/HfO2/SRPO SiO2 MOSFETs Noise and Fluctuations, 2005, 780 : 311 - 314