7-Transistor 2-Memristor Based Non-volatile Static Random Access Memory Cell Design

被引:0
|
作者
Pandey, Manish Kumar [1 ]
Ranu, Shashank Kumar [1 ]
Gupta, Prashant [1 ]
Islam, Aminul [1 ]
机构
[1] Birla Inst Technol, Dept Elect & Commun Engn, Ranchi, Jharkhand, India
来源
PROCEEDINGS OF 2015 ONLINE INTERNATIONAL CONFERENCE ON GREEN ENGINEERING AND TECHNOLOGIES (IC-GET) | 2015年
关键词
Memristor; nvSRAM; Read access time; Write access time; MEMRISTOR; SRAM; CIRCUIT; DEVICES;
D O I
暂无
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Emerging chip technologies employ power-off mode to reduce the power dissipation of chips. Non-volatile SRAM (nvSRAM) enables a chip to store the data after power-off mode. This non-volatility can be achieved through memristor memory technology which is a promising emerging technology with unique properties such as high density, low-power and good-scalability. This paper provides a detailed study of memristor and proposes a memristor based 7T2M nvSRAM cell. This cell incorporates two memristors, which store the bit information present in the 6T SRAM cell, and a 1T switch, which helps to restore the previously written bit in situations of power supply failures, thereby making the SRAM non-volatile.
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页数:4
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