Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

被引：41

作者：

Duff, S. M. ^{[1
]}

Austermann, J. ^{[1
]}

Beall, J. A. ^{[1
]}

Becker, D. ^{[1
]}

Datta, R. ^{[2
]}

Gallardo, P. A. ^{[3
]}

Henderson, S. W. ^{[3
]}

Hilton, G. C. ^{[1
]}

Ho, S. P. ^{[4
]}

Hubmayr, J. ^{[1
]}

Koopman, B. J. ^{[3
]}

Li, D. ^{[5
]}

McMahon, J. ^{[2
]}

Nati, F. ^{[6
]}

Niemack, M. D. ^{[3
]}

Pappas, C. G. ^{[4
]}

Salatino, M. ^{[4
]}

Schmitt, B. L. ^{[6
]}

Simon, S. M. ^{[4
]}

Staggs, S. T. ^{[4
]}

Stevens, J. R. ^{[3
]}

Van Lanen, J. ^{[1
]}

Vavagiakis, E. M. ^{[3
]}

Ward, J. T. ^{[6
]}

Wollack, E. J. ^{[7
]}

机构：

[1] NIST, 325 Broadway, Boulder, CO 80305 USA

[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48103 USA

[3] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

[4] Princeton Univ, Dept Astrophys Sci, Princeton, NJ 08544 USA

[5] SLAC Natl Accelerator Lab, 2575 Sandy Hill Rd, Menlo Pk, CA 94025 USA

[6] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

[7] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2016年 / 184卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

AlMn; Multichroic; Polarimeter; SiNx; Transition-edge sensor; POLARIZATION;

D O I：

10.1007/s10909-016-1576-y

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Advanced ACTPol (AdvACT) is a third-generation cosmic microwave background receiver to be deployed in 2016 on the Atacama Cosmology Telescope (ACT). Spanning five frequency bands from 25 to 280 GHz and having just over 5600 transition-edge sensor (TES) bolometers, this receiver will exhibit increased sensitivity and mapping speed compared to previously fielded ACT instruments. This paper presents the fabrication processes developed by NIST to scale to large arrays of feedhorn-coupled multichroic AlMn-based TES polarimeters on 150-mm diameter wafers. In addition to describing the streamlined fabrication process which enables high yields of densely packed detectors across larger wafers, we report the details of process improvements for sensor (AlMn) and insulator (SiN) materials and microwave structures, and the resulting performance improvements.

引用

页码：634 / 641

页数：8

共 7 条

[1] Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers
S. M. Duff
J. Austermann
J. A. Beall
D. Becker
R. Datta
P. A. Gallardo
S. W. Henderson
G. C. Hilton
S. P. Ho
J. Hubmayr
B. J. Koopman
D. Li
J. McMahon
F. Nati
M. D. Niemack
C. G. Pappas
M. Salatino
B. L. Schmitt
S. M. Simon
S. T. Staggs
J. R. Stevens
J. Van Lanen
E. M. Vavagiakis
J. T. Ward
E. J. Wollack
Journal of Low Temperature Physics, 2016, 184 : 634 - 641
[2] Characterization of AlMn TES Impedance, Noise, and Optical Efficiency in the First 150 mm Multichroic Array for Advanced ACTPol
Crowley, Kevin T.
Choi, Steve K.
Kuan, Jeffrey
Austermann, Jason E.
Beall, James A.
Datta, Rahul
Duff, Shannon M.
Gallardo, Patricio A.
Hasselfield, Matthew
Henderson, Shawn W.
Ho, Shuay-Pwu P.
Koopman, Brian J.
Niemack, Michael D.
Salatino, Maria
Simon, Sara M.
Staggs, Suzanne T.
Wollack, Edward J.
MILLIMETER, SUBMILLIMETER, AND FAR-INFRARED DETECTORS AND INSTRUMENTATION FOR ASTRONOMY VIII, 2016, 9914
[3] Low Tc superconductive circuits fabricated on 150-mm-diameter wafers using a doubly planarized Nb/AlOx/Nb process
Berggren, KK
Macedo, EM
Feld, DA
Sage, JP
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1999, 9 (02) : 3271 - 3274
[4] Effective intrinsic gettering for 200mm and 300mm P/P- wafers in a low thermal budget 0.13μm advanced CMOS logic process
Binns, MJ
Bertolini, S
Wise, R
Myers, DJ
McKenna, TA
SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2, 2002, 2002 (02): : 647 - 657
[5] Integration of (Poly-Si/Air)n Distributed Bragg Reflectors in a 150 mm Bulk Micromachined Wafer-Level MOEMS Fabrication Process
Helke, Christian
Seiler, Jan
Meinig, Marco
Grossmann, Toni Dirk
Bonitz, Jens
Haase, Micha
Zimmermann, Sven
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Kurth, Steffen
Reuter, Danny
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IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, 2024, 19 (05) : 767 - 772
[6] The realization of uniform and reliable intrinsic gettering in 200mm p- and p/p- wafers for a low thermal budget 0.18μm advanced CMOS logic process
Binns, MJ
Banerjee, A
Wise, R
Myers, DJ
McKenna, TA
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 387 - 392
[7] Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry
Sun, Hui
Wang, Maojun
Chen, Jianguo
Liu, Peng
Kuang, Wenteng
Liu, Meihua
Hao, Yilong
Chen, Dongmin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (11) : 4814 - 4819

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