The realization of uniform and reliable intrinsic gettering in 200mm p- and p/p- wafers for a low thermal budget 0.18μm advanced CMOS logic process

P- polished and P/P- epitaxial wafers with and without an MDZ (R) (Magic Denuded Zone) heat-treatment have been processed through a low thermal budget 0.18 mum advanced CMOS Logic process. Measurements at key stages in the process clearly demonstrate that very little precipitation (below detection limit) occurs in the standard P- or P/P- wafers. In contrast, very uniform precipitation with consistent BMD (bulk micro-defect) and PFZ (precipitate-free zones) are observed for wafers that received the prior MDZ (R) heat-treatment. This was demonstrated by subjecting the wafers to an additional 16 hour 1000 degreesC anneal designed to grow precipitates to a size where they become detectable by the cleave and etch technique. In addition, nickel haze gettering tests clearly demonstrated that reliable gettering of nickel (up to 4x10(16) cm(-2)) could be obtained early in the device process for wafers which received the MDZ (R) heat-treatment without the need for the additional 16 hour 1000 degreesC anneal. However, nickel haze was observed for standard P- polished and P/P- epitaxial wafers even at the end of the process indicating the complete lack of any intrinsic gettering.