Effect of alloy fluctuations in InGaN/GaN quantum wells on optical emission strength

被引：0
|
作者：
Maur, M. Auf der [1 ]
Barettin, D. [1 ]
Pecchia, A. [1 ]
Sacconi, F. [1 ]
Di Carlo, A. [1 ]
机构：
[1] Univ Studi Roma Tor Vergata, Dept Elect Engn, Rome, Italy
来源：
2014 14TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2014) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we present the effect of compositional fluctuations in InGaN/GaN quantum wells (QWs) on their spontaneous emission properties. We show that random alloy fluctuations lead to fluctuations of both the optical matrix elements and the emission energy and that the two quantities are correlated. A qualitatively different behaviour between flat band QWs and QWs with strong quantum confined Stark effect is found and explained by the localization behaviour of electrons and holes.
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页码：11 / 12
页数：2
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