A Deterministic Boltzmann Equation Solver Based on a Higher Order Spherical Harmonics Expansion With Full-Band Effects

被引：11
|
作者：
Hong, Sung-Min [1 ]
Matz, Gregor [1 ]
Jungemann, Christoph [1 ]
机构：
[1] Bundeswehr Univ, EIT4, D-85577 Neubiberg, Germany
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 10期
关键词：
Boltzmann equation; full-band (FB) effects; spherical harmonics expansion (SHE); ELECTRON-TRANSPORT; MOSFET SIMULATION; POISSON; DEVICES;
D O I：
10.1109/TED.2010.2062519
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a deterministic Boltzmann equation solver based on a higher order spherical harmonics expansion, including full-band (FB) effects, is presented. An anisotropic band structure for the conduction band with an invertible energy/wave vector relation has been generated by matching several moments of the group velocity of the silicon FB structure. A generalized formulation of the free-streaming operator is presented, which is stabilized according to the maximum entropy dissipation scheme. From the numerical results for various systems such as silicon bulk, an n(+)-n-n(+) structure, and SiGe heterojunction bipolar transistors, it can be concluded that the new model improves significantly the accuracy of the Boltzmann solver compared to previous band models without degrading the numerical stability.
引用
收藏
页码：2390 / 2397
页数：8
相关论文
共 50 条
  • [31] Numerical methods for the semiconductor Boltzmann equation based on spherical harmonics expansions and entropy discretizations
    Ringhofer, C
    TRANSPORT THEORY AND STATISTICAL PHYSICS, 2002, 31 (4-6): : 431 - 452
  • [32] Higher Order Surface Integral Equation Solutions Employing Spherical Harmonics Based Multilevel Fast Multipole Method
    Ismatullah
    Eibert, Thomas F.
    2009 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM AND USNC/URSI NATIONAL RADIO SCIENCE MEETING, VOLS 1-6, 2009, : 1940 - +
  • [33] Performance Evaluation of Nanoscale FETs Based on Full-Band Complex Bandstructure and Real Space Poisson Solver
    Zhang, Xiaoyi
    Yeo, Yee-Chia
    Liang, Gengchiau
    2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2016, : 204 - 205
  • [34] ON THE SOLUTION OF THE ELECTRON BOLTZMANN-EQUATION IN HIGHER-ORDER LEGENDRE POLYNOMIAL EXPANSION
    WINKLER, R
    WILHELM, J
    HESS, A
    BEITRAGE AUS DER PLASMAPHYSIK-CONTRIBUTIONS TO PLASMA PHYSICS, 1983, 23 (05): : 483 - 496
  • [35] Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation
    Rupp, K.
    Lagger, P. W.
    Grasser, T.
    Juengel, A.
    2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012,
  • [36] An efficient solution scheme for the spherical-harmonics expansion of the Boltzmann transport equation applied to two-dimensional devices
    Vecchi, MC
    Mohring, J
    Rudan, M
    VLSI DESIGN, 1998, 6 (1-4) : 239 - 242
  • [37] 2-DIMENSIONAL MOSFET SIMULATION BY MEANS OF A MULTIDIMENSIONAL SPHERICAL-HARMONICS EXPANSION OF THE BOLTZMANN TRANSPORT-EQUATION
    GNUDI, A
    VENTURA, D
    BACCARANI, G
    ODEH, F
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 917 - 924
  • [38] 2-DIMENSIONAL MOSFET SIMULATION BY MEANS OF A MULTIDIMENSIONAL SPHERICAL-HARMONICS EXPANSION OF THE BOLTZMANN TRANSPORT-EQUATION
    GNUDI, A
    VENTURA, D
    BACCARANI, G
    ODEH, F
    SOLID-STATE ELECTRONICS, 1993, 36 (04) : 575 - 581
  • [39] Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle
    Jungemann, C.
    Pham, A. T.
    Meinerzhagen, B.
    Ringhofer, C.
    Bollhoefer, M.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
  • [40] Transport and noise calculations for nanoscale Si devices based on the Langevin Boltzmann equation expanded with spherical harmonics
    Jungemann, C.
    2008, American Scientific Publishers (05)
12345