Ion Milling of Ex Situ Lift-Out FIB Specimens

被引：0

作者：

Campin, M. J. ^{[1
]}

Bonifacio, C. S. ^{[1
]}

Boccabella, M. ^{[1
]}

Fischione, P. E. ^{[1
]}

Kang, H. H. ^{[2
]}

机构：

[1] EA Fischione Instruments Inc, Export, PA 15632 USA

[2] GLOBALFOUNDARIES, Ctr Complex Anal, Malta, NY 12020 USA

来源：

ISTFA 2017: CONFERENCE PROCEEDINGS FROM THE 43RD INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2017年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The semiconductor industry is constantly investigating new methods that can improve both the quality of TEM lamella and the speed at which they can be created. To improve throughput, a combination of FIB-based preparation and ex situ lift-out (EXLO) techniques have been used. Unfortunately, the carbon support on the EXLO grid presents problems if the lamella needs to be thinned once it is on the grid. In this paper, we present low-energy (<1 keV), narrow-beam (<1 gm diameter), Ar+ ion milling as a method of preparing electron transparent and gallium-free EXLO FIB specimens.

引用

页码：260 / 264

页数：5

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