X-ray spectroscopy as the method of investigation of the electron structure in disordered semiconductors

We have performed the analysis of the abilities of X-ray spectroscopy in the investigations of the features of electron structure for semiconductors with different degree of disorder. The advantages of X-ray spectroscopy allowing to obtain information on the local density of electron states have been demonstrated on the examples of strongly doped silicon, semiconductor alloys of A(3)B(5) and A(2)B(6) and amorphous alloys of a-SiNx:H. It was shown that this method allows to reveal the formation of the clusters of chemical compounds on the examples of strongly doped silicon, single-crystalline solid state semiconductor alloy, amorphous alloy or the presence of purely statistical disorder as well as their role in the formation of specific features of the electron structure. (C) 1998 Elsevier Science B.V. All rights reserved.