Mask phase and transmission variation effects on wafer critical dimensions for nodes 65nm and 45nm

被引：6
|
作者：
Dufaye, F. [1 ]
Gough, S. [1 ]
Sundermann, F. [1 ]
Farys, V. [1 ]
Miyashita, H. [2 ]
Sartelli, L. [2 ]
Perissinotti, F. [2 ]
Buttgereit, U. [3 ]
Perlitz, S. [3 ]
Birkner, R. [3 ]
机构：
[1] STMicroelect Crolles300, 850 Rue Jean Monnet, F-38926 Crolles, France
[2] Dai Nippon Photomasks Europe, I-20041 Agrate Brianza, Italy
[3] Carl Zeiss SMS GmbH, D-07740 Jena, Germany
来源：
26TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE | 2010年 / 7545卷
关键词：
D O I：
10.1117/12.863147
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In microelectronic industry, mainly from the 65nm node, phase shift photomasks (PSM) are increasingly used for critical layers, optical properties of the shifter (MoSi) giving a better control of critical dimensions (CD) in photoresist. Fab-users and maskshops have committed on specifications that restrict phase and transmission variations within certain limits. The goal of this study is to validate and/or update these previously admitted limits. A specific test reticle has been jointly designed with several structures representative of 65nm and 45nm nodes and then manufactured with a specific process in order to voluntarily degrade the phase and transmission uniformity within the mask. Knowing all CD and their related phase and transmission on mask, CD variations seen on wafers have been directly linked to phase and transmission variations. In parallel, rigorous simulations have been performed using Panoramic software in order to predict effects of phase and transmission variations on wafer. This reticle has been also used for early studies to evaluate the impact of phase and transmission variations on optical proximity correction (OPC) model.
引用
收藏
页数：13
相关论文
共 50 条
  • [41] Critical impact of mask electromagnetic effects on optical proximity corrections performance for 45 nm and beyond
    Azpiroz, Jaione Tirapu
    Rosenbluth, Alan E.
    Lai, Kafai
    Fonseca, Carlos
    Yang, Da
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (01): : 164 - 168
  • [42] Comparisons of 9% versus 6% transmission attenuated phase shift mask for the 65 nm device node
    Montgomery, PK
    Litt, LC
    Conley, W
    Lucas, K
    Van Wingerden, J
    Vandenberghe, G
    Wiaux, V
    JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2004, 3 (02): : 276 - 283
  • [43] Topology-related effects of Gated-Vdd and Gated-Vss techniques on full-adder Leakage and Delay at 65nm and 45 nm
    Nair, Pradeep
    Eratne, Savithra
    John, Eugene
    2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), VOLS 1-4, 2008, : 972 - 975
  • [44] Impact of air-borne NH3 and humidity against wafer-to-wafer CD variation in ArF lithography through 45nm technology node
    Naito, Ryoichiro
    Matsuda, Yoshitaka
    Shioguchi, Masaharu
    Shibata, Tsuyoshi
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIV, 2007, 6519
  • [45] The magnitude of potential exposure-tool-induced critical dimension and overlay errors in double dipole lithography for the 65-nm and 45-nm technology nodes
    Chiou, TB
    Chen, AC
    Tseng, SE
    Eurlings, M
    Hendrickx, E
    Hsu, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (6B): : 3672 - 3679
  • [46] The magnitude of potential exposure-tool-induced critical dimension and overlay errors in double dipole lithography for the 65-nm and 45-nm technology nodes
    Chiou, T.-B. (tsann-bim.chiou@asml.com), 1600, Japan Society of Applied Physics (43):
  • [47] Integrated photomask defect printability check, mask repair and repair validation procedure for phase-shifting masks for the 45nm node and beyond
    Ehrlich, Christian
    Buttgereit, Ute
    Boehm, Klaus
    Scheruebl, Thomas
    Edinger, Klaus
    Bret, Tristan
    PHOTOMASK TECHNOLOGY 2007, PTS 1-3, 2007, 6730
  • [48] 中芯国际65nm和45nm CMOS逻辑工艺选择Kilopass OTP嵌入式非挥发性内存硅智财(NVM)解决方案
    本刊通讯员
    电子与封装, 2009, 9 (10) : 47 - 47
  • [49] 65nm node gate pattern using attenuated phase shift mask with off-axis illumination and sub-resolution assist features
    Zhang, G
    Terry, M
    O'Brien, S
    Soper, R
    Mason, M
    Kim, W
    Wang, C
    Hansen, S
    Lee, J
    Ganeshan, J
    Optical Microlithography XVIII, Pts 1-3, 2005, 5754 : 760 - 772
  • [50] Surface modification of a MoSiON phase shift mask to reduce critical dimension variation after exposure to a 193-nm ArF excimer laser
    Choo, Hyeokseong
    Seo, Dongwan
    Lim, Sangwoo
    APPLIED SURFACE SCIENCE, 2014, 311 : 831 - 836
12345