Approach to in situ characterization of polysilicon surfaces annealed by XeCl excimer laser

被引：0
|
作者：
Nishibe, T
Mitsuhashi, H
Matsuura, Y
Kawakyu, Y
机构：
[1] Mat. and Devices Res. Laboratories, Toshiba Corporation 33, Yokohama 235, Shin-Isogo-cho, Isogo-ku
来源：
APPLIED SURFACE SCIENCE | 1996年 / 99卷 / 01期
关键词：
D O I：
10.1016/0169-4332(95)00336-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An approach to in situ characterization of polysilicon surfaces annealed by a XeCl excimer laser has been investigated by the UV reflectance method and atomic force microscopy which represents a nano-scale surface morphology. The features of the surface morphology were found to be closely connected to the performance of TFT devices.
引用
收藏
页码：35 / 40
页数：6
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