Laser-plasma synthesis of diamond films

被引:8
|
作者
Konov, VI [1 ]
Uglov, SA [1 ]
机构
[1] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia
关键词
D O I
10.1070/QE1998v028n04ABEH001212
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel technique for plasma synthesis of diamond films (and in future of other materials) with the aid of a stationary optical discharge in flowing mixtures of reactant gases was proposed and experimentally implemented. The use of a cw CO2 laser of 2.5 kW power acting on an Xe-H-2-CH4 gaseous mixture, in an atmospheric-pressure reactor developed for the purpose, made it possible to achieve diamond film deposition rates of 30 - 50 mu m h(-1) on an area of 1 cm(2). The characteristic features and advantages of this laser-plasma deposition technique are discussed.
引用
收藏
页码:281 / 282
页数:2
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